Главная > Отраслевая информация > Forming way of Silicon Carbide Ceramic
Отраслевая информация

Forming way of Silicon Carbide Ceramic


Silicon Carbide Ceramic is formed in two ways, Reaction Bonding and Sintering.Each forming method greatly affects the end microstructure.

Reaction bonded Silicon Carbide ceramic(RBSIC or SISIC) is made by infiltrating compacts made of mixtures of SiC and Carbon with liquid Silicon. The Silicon reacts with the Carbon forming more SiC which bonds the initial SiC particles.

Sintered Silicon Carbide ceramic(SSiC) is produced from pure SiC powder with non-oxide sintering aids. Conventional ceramic forming processes are used and the material is sintered in an inert atmosphere at temperatures up to 2000ºC or higher.

Both forms of Silicon Carbide (SiC) are highly wear resistant with good mechanical properties, including high temperature strength and thermal shock resistance.

предыдущий: The era of electric car silicon carbide devices passed the scientific and technological achievements appraisal следующий: Calcium carbide furnace exhaust gas purification CO device successfully put into operation
Related Industry Information
Общайтесь с поставщика?поставщик
Clark Jia Mr. Clark Jia
Что я могу сделать для вас?
поставщик контакта